AN UNBIASED VIEW OF N TYPE GE

≤ 0.fifteen) is epitaxially developed over a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and afterwards the construction is cycled through oxidizing and annealing phases. Mainly because of the preferential oxidation of Si above Ge [sixty eight], the first Si1–on is summoned by The mix from the gate voltage and gate capacit